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Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4 3200 MT/s

Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4 3200 MT/s

$47.81 $38.248
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4GB, DDR4, 3200MT/s, Non-ECC, CL22, 1.2V, 288-pin, JEDECKey FeaturesNominal and dynamic on-die termination (ODT) for data, strobe, and mask signalsLow-power auto self refresh (LPASR)Data bus inversion (DBI) for data busOn-die…

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4GB, DDR4, 3200MT/s, Non-ECC, CL22, 1.2V, 288-pin, JEDEC

Key Features

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 8 internal banks; 2 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • RoHS Compliant and Halogen-Free

Description

ValueRAM’s KVR32N22S6/4 is a 512M x 64-bit (4GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

Specifications

Power
Memory voltage 1.2 V
Design
JEDEC standard Yes
Technical details
Country of origin Taiwan
Doesn’t contain Halogen
Compliance certificates RoHS
Memory
Buffered memory type Unregistered (unbuffered)
Memory layout (modules x size) 1 x 4 GB
Internal memory 4 GB
Component for PC/server
Memory form factor 288-pin DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Module configuration 512M x 64
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
Memory ranking 1
ECC No
Internal memory type DDR4
Programming power voltage (VPP) 2.5 V
Features
Buffered memory type Unregistered (unbuffered)
Memory layout (modules x size) 1 x 4 GB
Internal memory 4 GB
Component for PC/server
Memory form factor 288-pin DIMM
CAS latency 22
Memory voltage 1.2 V
Lead plating Gold
Module configuration 512M x 64
Row cycle time 45.75 ns
Refresh row cycle time 350 ns
Row active time 32 ns
Country of origin Taiwan
Memory ranking 1
ECC No
Internal memory type DDR4
Programming power voltage (VPP) 2.5 V
JEDEC standard Yes
Harmonized System (HS) code 84733020
Memory data transfer rate 3200 MT/s
Operational conditions
Operating temperature (T-T) 0 – 85 C
Storage temperature (T-T) -55 – 100 C
Sustainability
Doesn’t contain Halogen
Weight & dimensions
Width 5.25″ (133.3 mm)
Height 1.23″ (31.2 mm)
Logistics data
Harmonized System (HS) code 84733020
Other features
Country of origin Taiwan
Harmonized System (HS) code 84733020

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