The 2N5416 PNP Transistor is a high-voltage, high-power transistor designed for use in amplifier and switching applications. With its robust performance and reliable operation, it is commonly used in audio amplification, power control circuits, and general-purpose electronic applications.

Key Features:

• PNP Bipolar Junction Transistor (BJT): Suitable for power switching and amplification.
• High Voltage Capability: Supports up to -160V collector-emitter voltage.
• High Collector Current: Handles up to -1A of continuous current.
• Low Saturation Voltage: Ensures efficient power handling.
• High Power Dissipation: Maximum power dissipation of 20W.
• TO-39 Package: Metal case for improved thermal performance.

Package Includes:

• 1 x 2N5416 PNP Transistor

Specifications:

• Transistor Type: PNP
• Collector-Emitter Voltage (VCE): -160V
• Collector-Base Voltage (VCB): -160V
• Emitter-Base Voltage (VEB): -5V
• Collector Current (IC): -1A
• Power Dissipation: 20W
• Gain (hFE): 40-140
• Operating Temperature: -55C to +200C
• Package Type: TO-39

Applications:

• Audio Power Amplification
• Switching Power Circuits
• Voltage Regulation
• Signal Processing
• Industrial and Military Applications

Datasheet:

Download the full 2N5416 datasheet for complete technical specifications.