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Fgh40n120an 1200v 40a Igbt

Fgh40n120an 1200v 40a Igbt

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The FGH40N120AN is a 1200V, 40A Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor. This component is designed for high-speed switching applications, offering low conduction and…

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The FGH40N120AN is a 1200V, 40A Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor. This component is designed for high-speed switching applications, offering low conduction and switching losses. It’s commonly used in induction heating, motor control, general-purpose inverters, and uninterruptible power supplies (UPS).

Key Specifications:

  • Collector-Emitter Voltage (VCES): 1200V
  • Collector Current (IC): 40A at 100C; 64A at 25C
  • Gate-Emitter Voltage (VGES): 25V
  • Collector Dissipation (PD): 417W at 25C
  • Saturation Voltage (VCE(sat)): 2.6V typical at IC = 40A
  • Package Type: TO-247

For detailed information, refer to the FGH40N120AN datasheet.

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