H11A1 Optocoupler Technical Data (DIP-6)

Description

The H11A1 is a phototransistor optocoupler.
It contains an infrared emitting diode (LED) and a silicon NPN phototransistor in a 6-pin DIP package.
It provides electrical isolation between the input and output.

Pin Configuration (DIP-6)

1 Anode (LED +)
2 Cathode (LED )
3 No Connection
4 Emitter (Transistor )
5 Collector (Transistor +)
6 Base (optional transistor base pin, usually left unconnected)

Absolute Maximum Ratings

• Forward current (LED): 60 mA max

• Reverse voltage (LED): 6 V

• Collector-emitter voltage: 30 V max

• Collector current: 50 mA max

• Collector power dissipation: 150 mW max

• Isolation voltage: 5300 VRMS

Electrical Characteristics (Typical Values)

• Forward voltage of LED: 1.2V 1.5V @ IF = 10 mA

• Collector-emitter saturation voltage: 0.4V @ IC = 2 mA

• Current Transfer Ratio (CTR): 50% to 600% (depending on binning)

• Isolation resistance: >10

• Coupling capacitance: <0.5 pF

• Switching speed: 2 s to 18 s

Features

• High dielectric isolation between input and output

• TTL, CMOS, and logic compatible

• Low coupling capacitance

• Wide operating temperature range (55C to +100C)

• Base pin available for sensitivity adjustment

Applications

• Logic signal isolation

• Microcontroller I/O protection

• Switch Mode Power Supply (SMPS) feedback

• Telephone ring detection

• Relay driver circuits

• General purpose signal isolation

Typical Application Circuit

Input Side (LED drive):

Vcc (5V) | 330 | Anode (Pin 1) Cathode (Pin 2) GND

Output Side (Phototransistor):

Vcc (5V) | 10k | Collector (Pin 5) Emitter (Pin 4) GND

• Base (Pin 6) left open

• When LED is ON transistor conducts output LOW

• When LED is OFF transistor cuts off output HIGH

Internal Structure (Simplified)

• Left side: Infrared LED

• Right side: Phototransistor (NPN)

• Separated by optical gap (no electrical contact, only light coupling)