IRF 530 MFET N-Channel Transistor

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IRF 530 MFET FEATURES Dynamic dV/dt rating Repetitive avalanche rated N-channel Fast switching Ease of paralleling Simple drive requirementsTECHNICALDrain-Source Voltage (VDS) :100VGate-Source Voltage (VGS) : 20VContinuous Drain Current @TC =…

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IRF 530 MFET FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
N-channel
Fast switching
Ease of paralleling
Simple drive requirements

TECHNICAL

Drain-Source Voltage (VDS) :100V
Gate-Source Voltage (VGS) : 20V
Continuous Drain Current @TC = 25 C : 14A
Continuous Drain Current @TC = 100 C : 10 A.
Single Pulse Avalanche Energy : 69mJ
Maximum Power Dissipation @TC = 25 C ; 88W

Soldering Temperature, for 10 seconds (1.6mm from case) 300C
Operating and Storage Temperature (TJ, TSTG) : -55 to 175 C

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IRF 530 MFET N-Channel Transistor

$29 $23.2

IRF 530 MFET FEATURES

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